The GaN Power Device Market report points out national and global business prospects and competitive conditions for GaN power device. Market size estimation and forecasts were given based on a detailed research methodology tailored to the conditions of the demand for GaN power device. The GaN power device market has been segmented by device (gan power discrete devices, gan power ics, gan power module), by industry vertical (consumer electronics, it & telecommunication, automotive, aerospace &defense, others (industrial and healthcare)). Historical background for the demand of GAN power device has been studied according to organic and inorganic innovations in order to provide accurate estimates of the market size. Primary factors influencing the growth of the demand GaN power device have also been established with potential gravity. Major regions covered in the study include North America, Europe, Asia Pacific, Middle East & Africa, and South America.
- GaN Power Discrete Devices
- GaN Power ICs
- GaN Power Module
By Industry Vertical:
- Consumer Electronics
- IT & Telecommunication
- Aerospace &Defense
- Others (Industrial and Healthcare)
North America GaN Power Device Market
- North America, by Country
- North America, by Device
- North America, by Industry Vertical
Europe GaN Power Device Market
- Europe, by Country
- The Netherlands
- Rest of Europe
- Europe, by Device
- Europe, by Industry Vertical
Asia Pacific GaN Power Device Market
- Asia Pacific, by Country
- South Korea
- Rest of Asia Pacific
- Asia Pacific, by Device
- Asia Pacific, by Industry Vertical
Middle East & Africa GAN Power Device Market
- Middle East & Africa, by Country
- Saudi Arabia
- South Africa
- Rest of Middle East & Africa
- Middle East & Africa, by Device
- Middle East & Africa, by Industry Vertical
South America GaN Power Device Market
- South America, by Country
- Rest of South America
- South America, by Device
- South America, by Industry Vertical
Major Companies: Efficient Power Conversion Corporation (EPC), GaN Systems, On Semiconductors, Panasonic Corporation, VisIC, Texas Instruments Inc., Toshiba Corporation, Fujitsu Limited, Infineon Technologies AG, Taiwan Semiconductor Manufacturing Company
Years Covered in the Study:
Historic Year: 2017-2018
Base Year: 2019
Estimated Year: 2020
Forecast Year: 2028
Objectives of this report:
- To estimate market size for GaN power device market on regional and global basis.
- To identify major segments in GaN power device market and evaluate their market shares and demand.
- To provide a competitive scenario for the GaN power device market with major developments observed by key companies in the historic years.
- To evaluate key factors governing the dynamics of GaN power device market with their potential gravity during the forecast period.
Reasons to Buy This Report:
- Provides niche insights for decision about every possible segment helping in strategic decision making process.
- Market size estimation of the GaN power device market on a regional and global basis.
- A unique research design for market size estimation and forecast.
- Identification of major companies operating in the market with related developments
- Exhaustive scope to cover all the possible segments helping every stakeholder in the GaN power device
This study is customized to meet your specific requirements:
- By Segment
- By Sub-segment
- By Region/Country
- Product Specific Competitive Analysis
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